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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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planar defect
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crystallographic defect also known as area defect; basically an array of dislocations, e.g. grain boundaries, stacking faults.
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line defect
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dislocation
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Term (Index)
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Definition
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crystal originated pits
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see COP.
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COP
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Crystal Originated Pits; structural defects formed on the surface of single-crystal semiconductor not related to any external interactions/process malfunctions.
Also, Crystal Originated Particles.
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Term (Index)
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Definition
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crystal pulling
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foundation of Czochralski single-crystal growth technique (CZ); process in which single-crystal seed is slowly withdrawn from the melt and crystalline material condenses at the liquid-solid interface gradually forming a rod-shaped piece of single-crystal material.
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Czochralski crystal growth, CZ
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process of obtaining single-crystal solids; the most common method for obtaining large diameter semiconductor wafers (e.g. 300 mm Si wafers); single crystal material is pulled out of the melt in which single-crystal seed is immersed and then slowly withdrawn; desired conductivity type and doping level is accomplished by adding dopants to the melt.
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Term (Index)
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Definition
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Czochralski crystal growth, CZ
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process of obtaining single-crystal solids; the most common method for obtaining large diameter semiconductor wafers (e.g. 300 mm Si wafers); single crystal material is pulled out of the melt in which single-crystal seed is immersed and then slowly withdrawn; desired conductivity type and doping level is accomplished by adding dopants to the melt.
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float-zone crystal growth, FZ
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method used to form single crystal semiconductor substrates; alternative to CZ crystal growth process; polycrystalline material (typically in the form of a circular rod) is converted into single-crystal by zone heating (zone melting) starting at the plane where single crystal seed is contacting polycrystalline material; used to make Si wafers; results in very high purity (i.e. very high resistivity) single crystal Si; does not allow as large Si wafers as CZ does (200 mm and 300 mm); radial distribution of dopant in FZ wafer not as uniform as in CZ wafer; wafers used in high-end Si microelectronics are almost uniquely CZ grown.
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ingot
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circular in shape piece of single-crystal semiconductor material typically resulting from the Czochralski crystal growth process; ingot is shaped and then sliced, using high-precision diamond saw, into wafers used to manufacture semiconductor devices.
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polishing
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process applied to either reduce roughness of the wafer surface or to remove excess material from the surface; typically mechanical-chemical process using chemically reactive slurry.
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slicing
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term refers to the process of cutting of the single-crystal semiconductor into wafers; high precision diamond blades are used.
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Bridgman growth
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A method used to grow single-crystal semiconductors typically III-V, e.g. GaAs; uses multi-zone furnace in which Ga and As are contained in the ampule and in contact with GaAs seed; the GaAs melt is passed from higher to lower temperature zone; conceptually similar to float-zone (FZ) crystal growth method.
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LEC
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Liquid Encapsulated Czochralski growth.
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Term (Index)
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Definition
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ferroelectric crystal
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materials (typically oxides) featuring permanent (i.e. even without external electric field) electric dipole moment and hence, display spontaneous polarization (centers of positive and negative charges of the crystal do not coincide); this state can be altered by applying bias to the crystal; memory effect possible.
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FRAM
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same as FeRAM; Ferroelectric Random Access Memory.
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Term (Index)
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Definition
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float-zone crystal growth, FZ
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method used to form single crystal semiconductor substrates; alternative to CZ crystal growth process; polycrystalline material (typically in the form of a circular rod) is converted into single-crystal by zone heating (zone melting) starting at the plane where single crystal seed is contacting polycrystalline material; used to make Si wafers; results in very high purity (i.e. very high resistivity) single crystal Si; does not allow as large Si wafers as CZ does (200 mm and 300 mm); radial distribution of dopant in FZ wafer not as uniform as in CZ wafer; wafers used in high-end Si microelectronics are almost uniquely CZ grown.
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Czochralski crystal growth, CZ
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process of obtaining single-crystal solids; the most common method for obtaining large diameter semiconductor wafers (e.g. 300 mm Si wafers); single crystal material is pulled out of the melt in which single-crystal seed is immersed and then slowly withdrawn; desired conductivity type and doping level is accomplished by adding dopants to the melt.
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Bridgman growth
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A method used to grow single-crystal semiconductors typically III-V, e.g. GaAs; uses multi-zone furnace in which Ga and As are contained in the ampule and in contact with GaAs seed; the GaAs melt is passed from higher to lower temperature zone; conceptually similar to float-zone (FZ) crystal growth method.
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Term (Index)
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Definition
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seed crystal
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single crystal material used to set a pattern for the growth of material in which this pattern is reproduced.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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