Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
constant - current stress, CCS  technique used to study time dependent breakdown of gate oxide; constant current featuring predetermined density is injected into the oxide until it breaks down (gate voltage drops to zero).
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
constant voltage stress, CVS  technique used to study time dependent breakdown of gate oxide; constant voltage is applied to the gate until oxide breaks down (rapid, irreversible increase of the gate current).
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.