Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
common base configuration  circuit configuration of a bipolar transistor where emitter is the input electrode, collector is the output electrode and base is the reference electrode for both input and output.
bipolar transistor, BJT  Bipolar Junction Transistor; a transistor consisting of three semiconductor regions (emitter, base, and collector) with alternating conductivity type (i.e. n-p-n or p-n-p); current flow comprises both majority and minority carriers (hence, "bipolar"), is controlled by vertical dimensions; current controlled device; key transistor structure in semiconductor electronics.
common base current gain  the ratio of the collector current to the emitter current.
common base cut-off frequency  frequency at which the current gain in the common-base configuration of bipolar transistor drops to 1.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.