Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
charge-to-breakdown, Qbd  measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
ramp voltage oxide breakdown, Ebd  measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
constant - current stress, CCS  technique used to study time dependent breakdown of gate oxide; constant current featuring predetermined density is injected into the oxide until it breaks down (gate voltage drops to zero).
constant voltage stress, CVS  technique used to study time dependent breakdown of gate oxide; constant voltage is applied to the gate until oxide breaks down (rapid, irreversible increase of the gate current).
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.