Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
channel length  distance between source and drain in Field Effect Transistors; shorter the channel faster switching by the FET can be achieved; reduction of the channel length in MOSFETs is a driving force behind the progress in microelectronics.
CMOS  Complementary Metal Oxide Semiconductor structure; consists of N-channel and P-channel MOS transistors; due to very low power consumption and dissipation as well minimization of the current in "off" state CMOS is a very effective device configuration for implementation of digital functions; CMOS is a key device in state-of-the-art silicon microelectronics.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.