Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
buried oxide, BOX  oxide layer in SOI substrates; oxide (SiO2) buried in silicon wafer at the depth ranging from less than 100 nm to several micrometers from the wafer surface depending on application; thickness of BOX is typically in the range from about 40 nm to about 100 nm.
bonded SOI  SOI substrates formed by bonding two silicon wafers with oxidized surfaces; following bonding one wafer is polished down to the desired thickness of active layer with interface oxide becoming a buried oxide.
SIMOX,   Separation by IMplantation of OXygen; common method used to fabricate SOI substrates; oxygen ions are implanted into Si substrate and form a buried oxide layer.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.