Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
buffered oxide etch, BEO  HF-water solution with ammonium fluoride, NH4F, added to prevent depletion of fluorine during oxide etching; at 34% NH4F : 6.8% HF : 58.6% H2O BEO etches thermal SiO2 etches at the rate of 100 nm/min.
DHF  dilute HF; SiO2 etching solution of 49% HF in water; typical mixture: 1 part HF : 100 parts H2O.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.