Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
breakdown, soft  leakage current in MOS structure exceeds predetermined threshold value without casing permanent damage to the oxide; can be reversed by reducing field in the oxide.
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
breakdown, hard  irreversible, catastrophic breakdown of an oxide in MOS structures.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.