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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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Term (Index)
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Definition
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breakdown field
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electric field at which breakdown in the material occurs and material looses its resistance against current flow; electric field in Si - 2.5x105 V/cm, GaAs - 3x105 V/cm, 6H-SiC - 40x105 V/cm, thermal SiO2 -107 V/cm
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Term (Index)
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Definition
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breakdown voltage
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voltage at which breakdown occurs and current increases uncontrollably (unless limited by the external circuit) and breakdown occurs.
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ramp voltage oxide breakdown, Ebd
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measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
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Term (Index)
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Definition
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breakdown, hard
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irreversible, catastrophic breakdown of an oxide in MOS structures.
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oxide breakdown
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irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.
Reference: See Semiconductor Note #20 for more information
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breakdown, soft
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leakage current in MOS structure exceeds predetermined threshold value without casing permanent damage to the oxide; can be reversed by reducing field in the oxide.
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Term (Index)
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Definition
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breakdown, soft
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leakage current in MOS structure exceeds predetermined threshold value without casing permanent damage to the oxide; can be reversed by reducing field in the oxide.
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oxide breakdown
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irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.
Reference: See Semiconductor Note #20 for more information
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breakdown, hard
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irreversible, catastrophic breakdown of an oxide in MOS structures.
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Term (Index)
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Definition
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hard breakdown
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catastrophic, irreversible breakdown of the MOS gate oxide.
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Term (Index)
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Definition
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oxide breakdown
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irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.
Reference: See Semiconductor Note #20 for more information
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progressive breakdown
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gradual degradation, and eventual breakdown, of the very thin gate oxide in MOS devices under the prolonged electric field stress.
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hard breakdown
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catastrophic, irreversible breakdown of the MOS gate oxide.
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soft breakdown
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excessive leakage current in the MOS gate oxide, but no irreversible breakdown of the oxide.
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Term (Index)
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Definition
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progressive breakdown
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gradual degradation, and eventual breakdown, of the very thin gate oxide in MOS devices under the prolonged electric field stress.
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oxide breakdown
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irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.
Reference: See Semiconductor Note #20 for more information
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Time-Dependent Dielectric Breakdown, TDDB
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technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).
Reference: Click here for additional information
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Term (Index)
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Definition
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ramp voltage oxide breakdown, Ebd
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measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
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oxide breakdown
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irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.
Reference: See Semiconductor Note #20 for more information
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charge-to-breakdown, Qbd
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measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
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Time-Dependent Dielectric Breakdown, TDDB
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technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).
Reference: Click here for additional information
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Time-Zero Dielectric Breakdown, TZDB
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technique to evaluate reliability of gate oxides in MOS devices; oxide breakdown occuring without prolonged stress, i.e. under the condition of stress rapidly increasing from zero to oxide breakdown.
Reference: Click here for additional information
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Term (Index)
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Definition
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reverse breakdown voltage,
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the value of reverse bias voltage that causes permanent breakdown of p-n junction, i.e. p-n junction is no longer capable of blocking current flow.
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Term (Index)
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Definition
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soft breakdown
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excessive leakage current in the MOS gate oxide, but no irreversible breakdown of the oxide.
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hard breakdown
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catastrophic, irreversible breakdown of the MOS gate oxide.
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Term (Index)
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Definition
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Time-Dependent Dielectric Breakdown, TDDB
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technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).
Reference: Click here for additional information
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charge-to-breakdown, Qbd
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measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
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Time-Zero Dielectric Breakdown, TZDB
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technique to evaluate reliability of gate oxides in MOS devices; oxide breakdown occuring without prolonged stress, i.e. under the condition of stress rapidly increasing from zero to oxide breakdown.
Reference: Click here for additional information
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Term (Index)
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Definition
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Time-Zero Dielectric Breakdown, TZDB
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technique to evaluate reliability of gate oxides in MOS devices; oxide breakdown occuring without prolonged stress, i.e. under the condition of stress rapidly increasing from zero to oxide breakdown.
Reference: Click here for additional information
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