Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
boron penetration  term usually refers to penetration of the gate oxide by boron from heavily p-doped poly-Si gate contact in PMOS part of the CMOS cell; at elevated temperature boron from the gate contact readily segregates into adjacent oxide causing major reliability problem; this deficiency is partially aleviated by adding nitrogen to the gate oxide (SiO2).
ONO  Oxide-Nitride-Oxynitride; multilayer MOS gate dielectric.
segregation coefficient, m  at given tempearature solubility of a given element in material A is in general not the same as in material B; m = equilibrium concentration of an element in material A/equilibrium concentration of the same element in material B.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.