Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
boron  element from the IIIrd group of periodic table acting as an acceptor (p-type dopant) in silicon; the only p-type dopant used in silicon device manufacturing.
dopant  element introduced into semiconductor to establish either p- type (acceptors) or n- type (donors) conductivity; common dopants in silicon: p-type, boron, B; n-type phosphorous, P, arsenic, As ,antimony, Sb.
acceptor  element introduced to semiconductor to generate free hole (by "accepting" electron from semiconductor atom and "releasing" hole at the same time); acceptor atom must have one valence electron less than host semiconductor; boron (B) is the most common acceptor in silicon technology; alternatives include indium and gallium (gallium features high diffusivity in SiO2, and hence, oxide cannot be used as mask during Ga diffusion)
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Term (Index) Definition
boron penetration  term usually refers to penetration of the gate oxide by boron from heavily p-doped poly-Si gate contact in PMOS part of the CMOS cell; at elevated temperature boron from the gate contact readily segregates into adjacent oxide causing major reliability problem; this deficiency is partially aleviated by adding nitrogen to the gate oxide (SiO2).
ONO  Oxide-Nitride-Oxynitride; multilayer MOS gate dielectric.
segregation coefficient, m  at given tempearature solubility of a given element in material A is in general not the same as in material B; m = equilibrium concentration of an element in material A/equilibrium concentration of the same element in material B.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.