Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
biaxial strain,  a biaxial strained crystal has stress introduced in two directions (x-y) along its surface; also referred to as global strain; just like in the case of an uniaxial strain, when created in the MOSFET channel its effect is different for NMOSFET and PMOSFET and depends on whether stress is tensile or compressive.
strain, biaxial,  strain in the crystal lattice along two axes typically perpendicular to each other.
uniaxial strain,  an uniaxially strain in the crystal has stress introduced in one direction; a tensile uniaxial strain created in the channel of an NMOSFET has a highly beneficial effect on electron mobility in the channel, and hence, transistor performance; engineering of strain in the channel is an important part of the state-of-the-art silicon CMOS technology.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.