Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
base width  distance between metallurgical emitter and collector junctions in bipolar transistor; key geometrical feature of the bipolar transistor defining its peformance; narrower the base more efficient transfer of minority carriers from the emitter to collector across the base, and hence, better performing transistor.
base  region in bipolar transistor sandwiched between emitter and collector; typically n-type so that highly mobile electrons act as minority carriers in the base; should be very thin to allow rapid transfer of minority carriers from emitter to collector; electric field is created in the base by nonuniform doping to accelerate minority carriers moving from emitter to collector.
metallurgical junction  plane in the p-n junction at which concentration of acceptors is the same as concentration of donors.
metallurgical junction  term refers to p-n junction; interface between the n-doped and p-doped regions in the junction, or the plane in which ND = NA.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.