Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
base pushout  Kirk effect; apparent base-width increase in a bipolar transistors caused by high concentration of carriers being swept from base to collector.
base width  distance between metallurgical emitter and collector junctions in bipolar transistor; key geometrical feature of the bipolar transistor defining its peformance; narrower the base more efficient transfer of minority carriers from the emitter to collector across the base, and hence, better performing transistor.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.