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Term (Index) Definition
base  region in bipolar transistor sandwiched between emitter and collector; typically n-type so that highly mobile electrons act as minority carriers in the base; should be very thin to allow rapid transfer of minority carriers from emitter to collector; electric field is created in the base by nonuniform doping to accelerate minority carriers moving from emitter to collector.
Term (Index) Definition
base punchthrough  occurs in bipolar transistors when at high collector-base voltage the collector space charge region expands over the entire base width and comes in contact with the emitter depletion region.
Term (Index) Definition
base punch-through  with the increased reverse bias of the collector-base junction in bipolar transistor space charge region of the junction extends through the base all the way to the emitter-base junction; in such situation transistor action is no longer possible.
Term (Index) Definition
base pushout  Kirk effect; apparent base-width increase in a bipolar transistors caused by high concentration of carriers being swept from base to collector.
base width  distance between metallurgical emitter and collector junctions in bipolar transistor; key geometrical feature of the bipolar transistor defining its peformance; narrower the base more efficient transfer of minority carriers from the emitter to collector across the base, and hence, better performing transistor.
Term (Index) Definition
base transport factor  factor defining efficiency of minority carrier transport through the base of a bipolar transistor, i.e. from the emitter junction to the collector junction; should be as close to 1 as possible.
bipolar transistor, BJT  Bipolar Junction Transistor; a transistor consisting of three semiconductor regions (emitter, base, and collector) with alternating conductivity type (i.e. n-p-n or p-n-p); current flow comprises both majority and minority carriers (hence, "bipolar"), is controlled by vertical dimensions; current controlled device; key transistor structure in semiconductor electronics.
base width  distance between metallurgical emitter and collector junctions in bipolar transistor; key geometrical feature of the bipolar transistor defining its peformance; narrower the base more efficient transfer of minority carriers from the emitter to collector across the base, and hence, better performing transistor.
Term (Index) Definition
base width  distance between metallurgical emitter and collector junctions in bipolar transistor; key geometrical feature of the bipolar transistor defining its peformance; narrower the base more efficient transfer of minority carriers from the emitter to collector across the base, and hence, better performing transistor.
base  region in bipolar transistor sandwiched between emitter and collector; typically n-type so that highly mobile electrons act as minority carriers in the base; should be very thin to allow rapid transfer of minority carriers from emitter to collector; electric field is created in the base by nonuniform doping to accelerate minority carriers moving from emitter to collector.
metallurgical junction  plane in the p-n junction at which concentration of acceptors is the same as concentration of donors.
metallurgical junction  term refers to p-n junction; interface between the n-doped and p-doped regions in the junction, or the plane in which ND = NA.
Term (Index) Definition
common base configuration  circuit configuration of a bipolar transistor where emitter is the input electrode, collector is the output electrode and base is the reference electrode for both input and output.
bipolar transistor, BJT  Bipolar Junction Transistor; a transistor consisting of three semiconductor regions (emitter, base, and collector) with alternating conductivity type (i.e. n-p-n or p-n-p); current flow comprises both majority and minority carriers (hence, "bipolar"), is controlled by vertical dimensions; current controlled device; key transistor structure in semiconductor electronics.
common base current gain  the ratio of the collector current to the emitter current.
common base cut-off frequency  frequency at which the current gain in the common-base configuration of bipolar transistor drops to 1.
Term (Index) Definition
common base current gain  the ratio of the collector current to the emitter current.
Term (Index) Definition
common base cut-off frequency  frequency at which the current gain in the common-base configuration of bipolar transistor drops to 1.
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