Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
ashing  removal (by volatilization) of organic materials (e.g. photoresist) from the wafer surface using strongly oxidizing ambient; e.g. oxygen plasma ashing.
photoresist  photo-sensitive material used in photolithography to transfer pattern from the mask onto the wafer; a liquid deposited on the surface of the wafer as a thin film then solidified by low temperature anneal; in the areas in which photoresist can be reached by UV radiation photochemical reactions change its properties, specifically, solubility in the developer; two types of photoresist: positive and negative.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
Term (Index) Definition
plasma ashing  removal of organic materials (e.g. photresist) by oxidation using plasma generated oxidizing species.
resist ashing  process of resist removal in strongly oxidizing gaseous atmosphere.
resist stripping  resist removal; process in which resist is removed from the surface when its is not needed any longer, i.e. after completion of etching operation, or ion implantation; can be greatly hampered by changes in the chemical composition of the resist occurring during processing, e.g. during ion implantation; carried out using either wet or dry (ashing) strongly oxidizing chemistries; can be greatly hampered by changes in chemical composition of the resist occuring during processing, e.g. during ion implantation.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
Term (Index) Definition
resist ashing  process of resist removal in strongly oxidizing gaseous atmosphere.
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