Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
anneal  heat treatment to which wafer is subjected in order to modify properties of materials/structures processed on its surface or in the bulk.
furnace horizontal  furnace for high temperature processing of semiconductor wafers in which process tube is positioned horizontally and wafers are located in the boat vertically on their edges; used for thermal oxidation, CVD, diffusion, and anneals; batch processor; an alternative configuration: vertical furnace.
furnace vertical  furnace for high temperature processing of semiconductor wafers in which process tube is positioned vertically and wafers are located horizontally inside the tube; superior to horizontal furnace in terms of heating uniformity, compatible with automatic wafer loading and footprint; warpage of horizontally supported wafers must be prevented; batch processor.
RTP  Rapid Thermal Processing; general term describing type of the process in which temperature of the wafer is rapidly increased by radiant heating from high-power halogen-quartz lamps; low-thermal budget process; useful in several applications in semiconductor device processing in which high temperature exposure is needed, but transfer of the large amount of thermal energy to the wafer is not desired .
Term (Index) Definition
post-implant anneal  anneal applied after implantation to activated implanted dopants and to repair implantation damage; must be carried out at low thermal budget (e.g. high temperature for a very short time) to avoid dopant redistribution.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.