Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
ammonia, NH3  toxic gas used in semiconductor processing as a source of atomic nitrogen which can be extracted from ammonia at lower temperature than from molecular nitrogen, N2.
nitridation  high temperature anneal in nitrogen containing ambient(NO, N2O or NH3); typically refers to the process during which nitrogen is added to ultra-thin SiO2 on Si surface.
nitric oxide, NO  used in semiconductor processing as a source of atomic nitrogen; highly toxic gas.
nitrous oxide, N2O  nonflammable gas used in semiconductor processing as a source of atomic nitrogen; nontoxic, know as a "laughing gas".
silicon nitride, Si3N4  dielectric material with energy gap = 5 eV and density ~3.0 g/cm3; excellent mask (barrier) against oxidation of Si; commonlly used in silicon integrated circuit manufacturing primarily in LOCOS process; not used as a gate dielectric due to inferior interface with silicon and bulk defects; properties depend on deposition method: dielectric strength ~107 V/cm, dielectric constant k ~6-7, bulk resistivity 1015-1017 ohm-cm; deposited by CDV.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.