Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
Zerbst plot  the way of plotting capacitance vs. time relationship for MOS capacitor pulsed into deep depletion; allows determination of generation and recombination lifetime in semiconductor substrate.
generation lifetime  average time needed to generate electron-hole pair
MOS, Metal Oxide Semiconductor  Metal-Oxide-Semiconductor; three-layer structure (typically M-SiO2-Si)in which concentration of charge carriers in semiconductor's sub-surface region is controlled by potential applied to metal contact or in other words by a field effect; MOS gate can invert sub-surface region of its semiconductor; it works only if no excessive leakage current flows across the oxide; core of the MOS Field Effect Transistors, and hence, CMOS. Also, imaging Charge Coupled Devices (CCD) are based on MOS capacitor structure.
recombination lifetime  average time needed for an electron-hole pair to recombine.
deep depletion  condition of the surface of semiconductor in MOS device before inversion is established.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.