Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
Zerbst plot  the way of plotting capacitance vs. time relationship for MOS capacitor pulsed into deep depletion; allows determination of generation and recombination lifetime in semiconductor substrate.
generation lifetime  average time needed to generate electron-hole pair
MOS, Metal Oxide Semiconductor  Metal-Oxide-Semiconductor; three-layer structure (typically M-SiO2-Si)in which concentration of charge carriers in semiconductor's sub-surface region is controlled by potential applied to metal contact or in other words by a field effect; MOS gate can invert sub-surface region of its semiconductor; it works only if no excessive leakage current flows across the oxide; core of the MOS Field Effect Transistors, and hence, CMOS. Also, imaging Charge Coupled Devices (CCD) are based on MOS capacitor structure.
recombination lifetime  average time needed for an electron-hole pair to recombine.
deep depletion  condition of the surface of semiconductor in MOS device before inversion is established.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.