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Term (Index) Definition
X-ray lithography  lithography method using X-ray to expose the resist; due to shorter wavelength of X-ray radiation (0.4 - 4 nm)XRL allows higher resolution than photolithography which uses longer wavelength UV irradiation; XRL requires special mask and resists sensitive to X-rays.
electron beam (e-beam) lithography, EBL  lithography technique which uses focused beam of electrons to expose the resist; no mask is used as pattern is "written" directly into the resist by very fast scanning of electron beam; pattern transfer resolution below 100 nm; resolution is limited by the proximity effect; EBL is commonly used to manufacture high resolution masks for photolithography and X-ray lithography.
photolithography, optical lithography  pattern definition method which uses UV radiation to expose the resist; the most common lithography technique in semiconductor manufacturing; using extremely short wavelength UV (extreme UV; wavelenghts below 200 nm), projection printing (steppers), phase shift masks, and adequate resist technology photolithography is capable of resolution below 100 nm.
X-ray mask  mask used in X-ray lithography; uses gold as an opaque material; gold pattern (defined using e-beam lithography) is supported by a thin membrane made out of material transparent to X-rays of given wavelength, e.g. Si3N4, SiC and others.
Term (Index) Definition
mask, X-ray lithography  see X-ray mask.
X-ray mask  mask used in X-ray lithography; uses gold as an opaque material; gold pattern (defined using e-beam lithography) is supported by a thin membrane made out of material transparent to X-rays of given wavelength, e.g. Si3N4, SiC and others.
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