Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
VeSFET  Vertical Slit Field Effect Transitor; highly innovative vertical transistor architecure with two idependently controlled gates; offers alternative to conventional scaling path to future generations ultra-low power digital ICs.
Field Effect Transistor, FET  transistor in which output current (source-drain current)is controlled by the voltage applied to the gate which can be either an MOS structure (MOSFET), a p-n junction (JFET), or metal-semiconductor contact (MESFET); FET is an unipolar transistor, i.e. current is controlled by majority carriers only.
vertical transistor  bipolar transistor in which current across emitter-base and collector-base junctions flows in the direction normal to the wafer surface; conventional configuration as opposed to lateral transistor which features inferior characteristics.
VeSTICS  Integrated circuit based on the Vertical Slit Field Effect Transistors.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.