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Term (Index) Definition
UV/Cl2  UV irradiation of Si surface in Cl2 ambient at the reduced pressure and wafer temperature not exceeding 200 oC; part of silicon dry cleaning scheme; results in volatilization of several metallic contaminants of Si surface and slight etching of silicon.
dry cleaning  process of contaminants removal from the wafer surface in the gas-phase; driven by either conversion of contaminant into volatile compound through chemical reaction, or its "knocking" off the surface via momentum transfer, or lift-off during slight etching of contaminated surface.

Reference: See Semiconductor Notes for more information
metallic contaminant  atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.
UV cleaning  dry cleaning process stimulated by UV radiation; e.g. volatilization of organic contaminants by UV/ozone exposure.
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