Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
USJ  ultra-shallow junction; terms applies primarily to the state-of-the-art MOSFETs source and drain regions which, in accordance with scaling rules, must be extremelly shallow (< 10 nm).
scaling rules  design rules which must be followed while scaling down geometry of integrated devices and interconnect lines; arbitrary reduction of key geometries, e.g. channel length in MOSFETs, may results in dysfunctional devices, e.g. short-channel effects in MOSFET.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.