Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Schottky effect  lowering of the potential barrier at the metal-semiconductor contact by the high electric field.
potential barrier  increased potential at the junction between two materials featuring different work function; e.g. p-type and n-type semiconductor (p-n junction) or metal-semiconductor contact (Schottky diode); there is an electric field present in the barrier region; the width of the potential barrier depends on the semiconductor doping; the height of potential barrier changes with applied bias voltage (reverse bias - high potential barrier, forward bias - low potential barrier) which makes junction to display diode-like current-voltage characteristics.
metal-semiconductor contact   key component of any semiconductor device; depending on materials involvced in the contact its properties can differ drastically; ohmic contact (linear, symetric current-voltage characteristic)in the case when work function of metal nmatches work function of semiconductor (no potential barrier at the interface); rectifying contact(non-linear, highly asymetric, diode-like current-voltage characteristic) in the case when work function of metal differs from the work function of semiconductor (potential barrier at the interface)- commonly referred to as a Schottky diode.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.