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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
Schottky diode  semiconductor diode in which metal-semiconductor contact is used to form a potential barrier.
diode  in general, a two-terminal element displaying asymmetric (rectifying) current-voltage characteristics; large current flows under the forward bias, very small current flows under the reverse bias; realized either as a vacuum diode or semiconductor diode; semiconductor diode requires built-in potential barrier heights of which depends on the applied voltage (bias); potential barrier at the p-n junction makes a p-n junction diode while potential barrier at the metal-semiconductor junction makes a Schottky diode.
Schottky barrier  potential barrier at the rectifying metal-semiconductor contact.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.