Semiconductor Glossary, Developed Semi OneSource.
Google
 


Check out the new SemiconductorGlossary.com weBLOG!

Semiconductor Glossary book, click here to see new prices!


With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


Search For Term

Term (Index) Definition
STM  Scanning Tunneling Microscopy
Scanning Tunneling Microscopy, STM  method allowing visualization of conductive solid surfaces with atomic resolution; conductive tip is scanned across the surface of the wafer; information about the physical features of the surface is based on the measurement of the tunneling current between the tip and the surface atoms.
Term (Index) Definition
Scanning Tunneling Microscopy, STM  method allowing visualization of conductive solid surfaces with atomic resolution; conductive tip is scanned across the surface of the wafer; information about the physical features of the surface is based on the measurement of the tunneling current between the tip and the surface atoms.
AFM  Atomic Force Microscopy; method capable of surface visualization with near-atomic resolution; measurement of roughness of solid surfaces based on electrostatic interactions between surface and measuring tip; tip can be set above the surface, on the surface, or can tap the surface oscillating at high frequency (tapping mode).
tunneling, tunneling current  transport of electron across the potential barrier without changing its energy; as opposed to electron transport "over" the barrier (thermionic emission) in which case its energy is must be changed; tunneling probability is a strong function of the width ofpotential barrier; examples: tunneling across the potential barrier at the metal-semiconductor contact, or across the potential barrier at the p-n junction, or across an oxide (direct tunneling for oxide thinner than about 3 nm, Fowler-Nordheim tunneling for oxide 5-10 nm thick) in MOS structure.
Hit Count=

Back To Top! 

Back To Home!







Hit Count=
Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.