Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
SPM  cleaning solution; involves H2SO4:H2O2 mixture typically in 1: 4; mixing of components increases temperature of solution to over 100 oC,strongly oxidizing clean is used to remove organic materials, including remaining photoresist, from the wafer surface; typically applied first in the cleaning sequence; also know as "piranha" clean and "caro" clean.
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
cleaning  process of removing contaminants (particles as well as metallic and organic) from the surface of the wafer; can be implemented using liquid chemicals (wet cleaning) of gases (dry cleaning).

Reference: Akrion, Inc.
HPM  hydrochloric acid-hydrogen peroxide-water mixture typically 1:1:5; same as SC2 and RCA2; cleaning solution used primarily to remove metallic contaminants; gradually replaced with alternative recipes such as those involving very weak solutions of HF:HCl in water.
organic contaminant  in semiconductor processing mainly hydrocarbons from resist/etching processes, ambient air, storage environment, shipping boxes, etc.; if not controlled may cause reliability problems in MOS devices as well as have an adverse effect on the characteristics of metal-semiconductor contacts and epitaxial layers; removal accomplished using strongly oxidizing ambient both wet and dry.
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