Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
SOS, Silicon-On-Sapphire  Silicon-On-Sapphire; special case of SOI where sapphire is an insulator (substrate)and active Si layer is formed on top of it by means of epitaxial deposition; beacause of the lattice mismatch between Si (cubic crystal)and sapphire (hexagonal crystal), Si layers epitaxially grown on sapphire feature high density of defects such as dislocations and grain boundaries; density of grown in defects can be drastically reduced using a series of amorphization (by implantation)and annealing steps; SOS substrate with ultra-thin Si layer (UTSi) show great promise in both RF as well as mainstream CMOS applications.

Reference: See Semiconductor Notes for more information on SOS technology
sapphire  single-crystal (hexagonal lattice)Al2O3; can be synthesized and processed into various shapes including wafers; excellent insulater, highly resistant to most common chemicals and temperature, transparent to the wavelengths from about 0.4 tp about 4 micrometers; used as a substrate in SOS (Silicon-on-Sapphire) technology as well as substrate for other thin-film semiconductors such as GaN.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.