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Term (Index) Definition
SILC  Stress Induced Leakage Current; a test designed to study reliability of thin oxides in MOS gates; density of leakage current is measured following electric field stress of the oxide and compared with its density measured before the stress; useful in characterization of ultra-thin oxides in which "hard" breakdown does not occur.
GOI  Gate Oxide Integrity; term implies electrical "integrity" of gate oxide; determined through various current/voltage/electric field stress tests of MOS gate stacks.
leakage current  uncontrolled ("parasitic") current flowing across region(s) of semiconductor structure/device in which no current should be flowing; e.g. current flowing across the gate oxide in MOS structure.
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