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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
SILC  Stress Induced Leakage Current; a test designed to study reliability of thin oxides in MOS gates; density of leakage current is measured following electric field stress of the oxide and compared with its density measured before the stress; useful in characterization of ultra-thin oxides in which "hard" breakdown does not occur.
GOI  Gate Oxide Integrity; term implies electrical "integrity" of gate oxide; determined through various current/voltage/electric field stress tests of MOS gate stacks.
leakage current  uncontrolled ("parasitic") current flowing across region(s) of semiconductor structure/device in which no current should be flowing; e.g. current flowing across the gate oxide in MOS structure.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.