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Term (Index) Definition
SC-1, SC1, SC 1  "standard clean" 1; see APM
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
particle  pieces of various materials (dust, ultra-small chips of silicon or silica, skin flakes, colonies of bacteria, etc.) present in the process environment; even ultra-small particles(<0.1 micrometer) on the Si surface may cause catastrophic damage; no effort is spared to prevent particle contamination (clean-room technology); most commonly particles are removed by an APM clean.
RCA-1, RCA1, RCA 1  wafer cleaning solution; same as APM and SC1
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.