Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Reactive Ion Etching, RIE  variation of plasma etching in which during etching semiconductor wafer is placed on the RF powered electrode; wafer takes on potential which accelerates etching species extracted from plasma toward the etched surface; chemical etching reaction is preferentially taking place in the direction normal to the surface, i.e. etching is more anisotropic than in plasma etching but is less selective; leaves etched surface damaged; the most common etching mode in semiconductor manufacturing.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.