Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
RIBE  Reactive Ion Beam Etching; etching using beam of chemically reactive ions; combines physical and chemical interactions with the etched material; in contrast to etching using beam of chemically neutral ions such as Ar+ which involves physical etching only.
Reactive Ion Etching, RIE  variation of plasma etching in which during etching semiconductor wafer is placed on the RF powered electrode; wafer takes on potential which accelerates etching species extracted from plasma toward the etched surface; chemical etching reaction is preferentially taking place in the direction normal to the surface, i.e. etching is more anisotropic than in plasma etching but is less selective; leaves etched surface damaged; the most common etching mode in semiconductor manufacturing.
ion milling  etching process; process in which high energy ions impinging on the surface of the solid cause ejection (sputtering) of the host atoms; highly anisotropic and non-selective etching.
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