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Term (Index) Definition
Qbd  charge-to-breakdown; method used to determine reliability of thin gate oxides in MOS devices; Time Dependent Dielectric Breakdown (TDDB) technique; adequate voltage is applied to the MOS structure to force a controlled flow of predetermined current density through the oxide , i.e. to inject controlled amount of charge into the oxide; by measuring time after which voltage drops to zero (oxide breakdown occurs) and knowing density of injected current, the charge needed to break the oxide is determined.
Ebd  electric field in the MOS gate oxide at which it breaks down, i.e. looses its insulating properties in an irreversible manner; Ebd is measured by increasing voltage (ramped voltage) applied to MOS gate while monitoring current flowing across the gate oxide.
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
Term (Index) Definition
charge-to-breakdown, Qbd  measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
ramp voltage oxide breakdown, Ebd  measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
constant - current stress, CCS  technique used to study time dependent breakdown of gate oxide; constant current featuring predetermined density is injected into the oxide until it breaks down (gate voltage drops to zero).
constant voltage stress, CVS  technique used to study time dependent breakdown of gate oxide; constant voltage is applied to the gate until oxide breaks down (rapid, irreversible increase of the gate current).
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.