Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Plasma Immersion Ion Implantation, PIII  very shallow implantation taking place when the wafer is "immersed" in plasma containing dopant ions; ions are not accelerated toward the substrate, and hence, penetration depth is very shallow; can be used to form ultra-shallow junctions.
doping  introduction of dopant into semiconductor for the purpose of altering its electrical properties; allows control of resistivity/conductivity of semiconductor by several orders of magnitude; also used to convert p-type material into n-type material and vice versa.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
plasma  ionized gas, specifically a self-contained part of the electrical discharge in gases featuring equal concentration of ions and electrons; plasma contains electrically active species, but as a whole is electrically neutral; ions can be extracted from plasma to play variety of important functions in semiconductor processing.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.