Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
ONO  Oxide-Nitride-Oxynitride; multilayer MOS gate dielectric.
boron penetration  term usually refers to penetration of the gate oxide by boron from heavily p-doped poly-Si gate contact in PMOS part of the CMOS cell; at elevated temperature boron from the gate contact readily segregates into adjacent oxide causing major reliability problem; this deficiency is partially aleviated by adding nitrogen to the gate oxide (SiO2).
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.