Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
MNOS  Metal-Oxide-Nitride-Semiconductor; double gate dielectric version of a MOSFET; due to the capability to store charge at the SiO2-Si3N4 interface is used as a memory device.
EPROM  Erasable Programmable Read Only Memory; a memory cell in which information (data) can be erased and replaced with new information (data).
silicon dioxide, SiO2  silica; native oxide of silicon and at the same time an excellent insulator; the most common insulator in semiconductor device technology, particularly in silicon MOS/CMOS where it is use as a gate oxide; high quality films are obtained by thermal oxidation of silicon; thermal SiO2 forms smooth, low-defect interface with Si; can be also readily deposited by CVD; SiO2 performs various functions in silicon device technology which to large degree depends on outstanding characteristics of; also used in non-Si devices; Key parameters: energy gap Eg ~ 8eV, dielectric strength 5-15 x 106 V/cm depending on thickness, dielectric constant k = 3.9, density 2.3 g/cm3, refractive index n =1.46, melting point ~ 1700 oC; prone to contamination with alkali ions and sensitive to high energy radiation; in semiconductor technology used in the form amorphous thin films; single crystal SiO2 is known as quartz.
silicon nitride, Si3N4  dielectric material with energy gap = 5 eV and density ~3.0 g/cm3; excellent mask (barrier) against oxidation of Si; commonlly used in silicon integrated circuit manufacturing primarily in LOCOS process; not used as a gate dielectric due to inferior interface with silicon and bulk defects; properties depend on deposition method: dielectric strength ~107 V/cm, dielectric constant k ~6-7, bulk resistivity 1015-1017 ohm-cm; deposited by CDV.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.