Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
LOCOS  Local Oxidation of Silicon; isolation scheme commonly used in MOS/CMOS silicon technology; thick (in the range of 500 nm) pad of thermally grown SiO2 separates adjacent devices (e.g. PMOS and NMOS transistor in CMOS structure); local oxidation is accomplished by using silicon nitride, Si3N4, to prevent oxidation of Si in selected areas, hence, "local" oxidation; prior to SiO2 pad formation silicon in between Si3N4 covered regions is implanted to form "channel stop"; Si3N4 mask is etched off following thermal oxidation and MOSFETs are ten formed in the open spaces.
isolation  in semiconductor terminology term typically refers to electrical isolation between two adjacent devices in an integrated circuit.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.