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Term (Index) Definition
LDD  Lightly Doped Drain; part of the drain engineering strategy in advanced CMOS; designed to minimize hot-carrier effects; the reduced doping gradient between drain and channel lowers electric field in the channel in the vicinity of the drain; implementation: moderate implant before spacer formation, heavy implant after spacer formation.
Term (Index) Definition
lightly doped drain, LDD  reduced doping of the drain region in veru small geometry MOS/CMOS transistor; part of the drain engineering strategy in advanced CMOS; designed to control drain-substarte breakdown; the reduced doping gradient between drain and channel lowers electric field in the channel in the vicinity of the drain; implementation: moderate implant before spacer formation, heavy implant after spacer formation.
drain  heavily doped region in semiconductor substrates located at the end of the channel in Field Effect Transistors; carriers are flowing out of the transistor through the drain.
drain engineering  modifications of the drain and channel region adjacent to the drain in integrated MOS and CMOS devices; goal is to improve characteristics of MOS transistors with ultra-short channel.
drain extension  low doping extension of source and drain toward channel; carried out by ion implantation; used in advanced CMOS to prevent premature breakdown of drain-substrate junction.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.