Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
InSb, indium antimonide  III-V semiconductor; direct bandgap; Eg=0.17 eV at 300K - the narrowest bandgap among practically useful semiconductors but the highest electron mobility of 80,000 cm2/V-sec at 300 K (hole mobility 450 cm2/V-sec).
AIII-BV, III-V, semiconductors  III-V semiconductors are synthesized using elements from 3rd and 5th group of periodic table; e.g. GaAs, GaP, GaN, GaAlAs, InP, InSb, etc.

Reference: SemiconductorPeriodicTable
InP, indium phosphide  indium phosphide;III-V semiconductor; direct bandgap, Eg=1.35 eV at 300K; crystal structure: cubic, lattice constant 0.587 nm, diel. constant 12.4, refractive index n=3.1, electron/hole mobility at 300 K: 4500/100 cm2
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.