Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
InP, indium phosphide  indium phosphide;III-V semiconductor; direct bandgap, Eg=1.35 eV at 300K; crystal structure: cubic, lattice constant 0.587 nm, diel. constant 12.4, refractive index n=3.1, electron/hole mobility at 300 K: 4500/100 cm2
AIII-BV, III-V, semiconductors  III-V semiconductors are synthesized using elements from 3rd and 5th group of periodic table; e.g. GaAs, GaP, GaN, GaAlAs, InP, InSb, etc.

Reference: SemiconductorPeriodicTable
InSb, indium antimonide  III-V semiconductor; direct bandgap; Eg=0.17 eV at 300K - the narrowest bandgap among practically useful semiconductors but the highest electron mobility of 80,000 cm2/V-sec at 300 K (hole mobility 450 cm2/V-sec).
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.