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Term (Index) Definition
IMEC clean  wet cleaning sequence developed at the Interuniveristy Microelectronics Center in Leuven, Belgium; includes three cleaning steps: SOM+APM+dHF/HCl with DI water rinses in between and Marangoni drying at the end.

Reference: IMEC
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
Marangoni drying  wafer drying technique; wafer is gradually withdrawn from water into the vapor of isopropyl alcohol (IPA) and nitrogen; due to the gradient of surface tension water from the surface of the wafer is pulled back into the body of water leaving emerging surface free of any moisture.
SOM  Sulphuric (acid)- Ozone (H2SO4 :O3)Mixture; increasingly common cleaning solution designed to remove organic contaminants from the wafer surface; as more economical replaces SPM cleaning mixture.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.