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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
GOI or GeOI  Germanium-on-Insulator; same concept as SOI; due to the higher electron mobility in Ge than in Si faster transistors are possible with GOI substrates; also allows high-speed photodetectors which will be critically important in future on-chip optical interconnects.
germanium, Ge  elemental semiconductor from the IVth group of periodic table, Eg = 0.66 eV, indirect bandgap, advantage: electron/hole mobility: 3900/1900 cm2/V-s higher than in Si; in contrast to Si does not form high quality native oxide but works well with high-k dielectrics to form MOS/CMOS structures; also increasingly important in conjunction with silicon as SiGe.

Reference: See more information on Ge...
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.