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Term (Index) Definition
GOI  Gate Oxide Integrity; term implies electrical "integrity" of gate oxide; determined through various current/voltage/electric field stress tests of MOS gate stacks.
Ebd  electric field in the MOS gate oxide at which it breaks down, i.e. looses its insulating properties in an irreversible manner; Ebd is measured by increasing voltage (ramped voltage) applied to MOS gate while monitoring current flowing across the gate oxide.
Qbd  charge-to-breakdown; method used to determine reliability of thin gate oxides in MOS devices; Time Dependent Dielectric Breakdown (TDDB) technique; adequate voltage is applied to the MOS structure to force a controlled flow of predetermined current density through the oxide , i.e. to inject controlled amount of charge into the oxide; by measuring time after which voltage drops to zero (oxide breakdown occurs) and knowing density of injected current, the charge needed to break the oxide is determined.
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
Term (Index) Definition
GOI or GeOI  Germanium-on-Insulator; same concept as SOI; due to the higher electron mobility in Ge than in Si faster transistors are possible with GOI substrates; also allows high-speed photodetectors which will be critically important in future on-chip optical interconnects.
germanium, Ge  elemental semiconductor from the IVth group of periodic table, Eg = 0.66 eV, indirect bandgap, advantage: electron/hole mobility: 3900/1900 cm2/V-s higher than in Si; in contrast to Si does not form high quality native oxide but works well with high-k dielectrics to form MOS/CMOS structures; also increasingly important in conjunction with silicon as SiGe.

Reference: See more information on Ge...
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