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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
Fowler - Nordheim tunneling, F-N  current flowing across MOS structure at the high electric field in the oxide; electrons tunnel from semiconductor conduction band into oxide conduction band through part of the potential barrier at the semiconductor-oxide interface; most likely to dominate current in MOS structures with oxide 5-10 nm thick.
direct tunneling  tunneling in MOS structures with ultra-thin oxide (< 4 nm) during which electrons from the conduction band in semiconductor are transferred across the oxide directly (i.e. without changing energy) into the conduction band of metal; probability of direct tunneling is a very strong function of the width of the barrier electron tunnels through (oxide thickness in MOS devices)
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.