Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
FinFET  innovative design of an MOSFET; typically built on SOI substrate on which silicon is etched into "fin"-like shaped body of the transistor; the gate is wrapped around and over the "fin" which also acts as a transistor's channel.

Reference: SemiOneSource,Notes, SN-4
double (dual) gate  innovative approach to MOSFET implementation; gate structure (gate oxide and gate contact)is formed on two sides of the channel, hence, "double"; doubles capacitance of the MOS gate without increasing device area; possible with new MOSFET's designs in which gate stack is normal to the surface; considered for next generation MOS-based switching devices (post-CMOS).
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.