Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
FinFET  innovative design of an MOSFET; typically built on SOI substrate on which silicon is etched into "fin"-like shaped body of the transistor; the gate is wrapped around and over the "fin" which also acts as a transistor's channel.

Reference: SemiOneSource,Notes, SN-4
double (dual) gate  innovative approach to MOSFET implementation; gate structure (gate oxide and gate contact)is formed on two sides of the channel, hence, "double"; doubles capacitance of the MOS gate without increasing device area; possible with new MOSFET's designs in which gate stack is normal to the surface; considered for next generation MOS-based switching devices (post-CMOS).
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.