Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Fermi level  energy level in solids at which the Fermi-Dirac distribution function is equal to 0.5.
Term (Index) Definition
Fermi level pinning, FLP,  imperfections of various nature of semiconductor surfaces may cause pinning of the Fermi energy on the surface preventing changes of the surface potential in response to the changes of the voltage applied to the metal contact of metal-semiconductor and metal-insulator-semicondcutor structures; M-S and MIS/MOS devices are rendered disfunctional when the Fermi level is pinned.
Fermi level  energy level in solids at which the Fermi-Dirac distribution function is equal to 0.5.
MOS, Metal Oxide Semiconductor  Metal-Oxide-Semiconductor; three-layer structure (typically M-SiO2-Si)in which concentration of charge carriers in semiconductor's sub-surface region is controlled by potential applied to metal contact or in other words by a field effect; MOS gate can invert sub-surface region of its semiconductor; it works only if no excessive leakage current flows across the oxide; core of the MOS Field Effect Transistors, and hence, CMOS. Also, imaging Charge Coupled Devices (CCD) are based on MOS capacitor structure.
metal-semiconductor contact   key component of any semiconductor device; depending on materials involvced in the contact its properties can differ drastically; ohmic contact (linear, symetric current-voltage characteristic)in the case when work function of metal nmatches work function of semiconductor (no potential barrier at the interface); rectifying contact(non-linear, highly asymetric, diode-like current-voltage characteristic) in the case when work function of metal differs from the work function of semiconductor (potential barrier at the interface)- commonly referred to as a Schottky diode.
Term (Index) Definition
intrinsic Fermi level  Fermi level in an intrinsic semiconductor; located not exactly in the center of the energy gap because of the different effective mass of electron and hole.
Fermi level  energy level in solids at which the Fermi-Dirac distribution function is equal to 0.5.
effective mass  effective mass of electrons and holes in semiconductor is defined taking into account forces exerted on the carriers by the atoms in the given crystal; different in different semiconductors, hence, mobility of charge carriers is different in different semiconductors.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.