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Term (Index) Definition
FUSI  Fully Silicided gate; term applies to gate contact material in advanced CMOS; typically NiSi.
silicide, silicides  alloys of silicon and metals; contact materials in silicon device manufacturing; e.g. TiSi2, CoSi2, NiSi; combine advantageous features of metal contacts (e.g significantly lower resistivity than poly-Si) and poly-Si contacts(e.g. no electromigration).
nickel silicide, NiSi  contact material in Si technology; resistivity of 14-20 microohm-cm is comparable to TiSi2 and CoSi2 but NiSi features lower temperature of formation: 350-750 oC; also less silicon is consumed to form this silicide (only 1.82 nm of Si is consumed per nm of metal); three different phase are possible depending on temperature of formation; nickel monosilicide (NiSi) is a desired phase due to the lowest resistivity.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.