Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Ebd  electric field in the MOS gate oxide at which it breaks down, i.e. looses its insulating properties in an irreversible manner; Ebd is measured by increasing voltage (ramped voltage) applied to MOS gate while monitoring current flowing across the gate oxide.
Qbd  charge-to-breakdown; method used to determine reliability of thin gate oxides in MOS devices; Time Dependent Dielectric Breakdown (TDDB) technique; adequate voltage is applied to the MOS structure to force a controlled flow of predetermined current density through the oxide , i.e. to inject controlled amount of charge into the oxide; by measuring time after which voltage drops to zero (oxide breakdown occurs) and knowing density of injected current, the charge needed to break the oxide is determined.
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
Term (Index) Definition
ramp voltage oxide breakdown, Ebd  measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
charge-to-breakdown, Qbd  measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
Time-Dependent Dielectric Breakdown, TDDB  technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).

Reference: Click here for additional information
Time-Zero Dielectric Breakdown, TZDB  technique to evaluate reliability of gate oxides in MOS devices; oxide breakdown occuring without prolonged stress, i.e. under the condition of stress rapidly increasing from zero to oxide breakdown.

Reference: Click here for additional information
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