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Term (Index) Definition
EOT, equivalent oxide thickness  a number used to compare performance of high-k dielectric MOS gates with performance of SiO2 based MOS gates; shows thickness of SiO2 gate oxide needed to obtain the same gate capacitance as the one obtained with thicker than SiO2 dielectric featuring higher dielectric constant k; e.g. EOT of 1 nm would result from the use a 10 nm thick dielectric featuring k=39 (k of SiO2 is 3.9)
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