Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
Deal - Grove model  a model describing kinetics of thermal oxidation of silicon based on chemical reaction between silicon and oxidizing species; most accurate for oxides thicker than about 30 nm; of limited use for oxide thinner than about 10 nm; assumes surface reaction controlled oxide growth in early stage of oxidation (linear regime) and controlled by diffusion of oxidizing species through the oxide during extended oxidation (parabolic regime); one among the best established models in silicon processing.
oxidation constants  coefficients used in calculations of oxide thickness in thermal oxidation of silicon; Deal-Grove model; defined for a given temperature of oxidation, oxidizing ambient, and surface orientation; take into account mass transfer in the gas-phase, diffusivity of oxidant in the oxide and the rate of surface reaction.
oxidation kinetics  term typically refers to the kinetics of thermal oxidation of silicon; see Deal-Grove model.
thermal oxidation, thermal oxide  growth of native oxide of the solid through oxidation of solid's surface at elevated temperature; results from chemical reaction of host atoms with oxygen containing ambient; thermal oxidation of silicon results in a very high quality silicon dioxide, SiO2, formed on the silicon surface; most other semiconductors do not form device quality thermal oxide, hence, term "thermal oxidation" is almost synonymous with "thermal oxidation of silicon".

Reference: Thermal oxidation of silicon.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.